Samsung has announced that it has started mass production of its new 8GB DDR4 DRAM chips using its 10nm process.
The company has said that the new RAM supports data speeds of up to 3,200 megabits per second, this is up 30 percent on its previous RAM chips.
Samsung opened the door to “10nm-class DRAM” for the first time in the industry after overcoming technical challenges in DRAM scaling. These challenges were mastered using currently available ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment.
“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics. “In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”
You can find out more details about Samsung’s new 8GB DDR4 RAM over at the company’s website at the link below.
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