Samsung has announced that it has started mass production of the world’s fastest DRAM, which is based on the new HDM Interface.
The DRAM is based on the second generation High Bandwidth Memory (HBM2) interface, the memory is designed to be used in high performance computers.
“By mass producing next-generation HBM2 DRAM, we can contribute much more to the rapid adoption of next-generation HPC systems by global IT companies,” said Sewon Chun, senior vice president, Memory Marketing, Samsung Electronics. “Also, in using our 3D memory technology here, we can more proactively cope with the multifaceted needs of global IT, while at the same time strengthening the foundation for future growth of the DRAM market.”
The newly introduced 4GB HBM2 DRAM, which uses Samsung’s most efficient 20-nanometer process technology and advanced HBM chip design, satisfies the need for high performance, energy efficiency, reliability and small dimensions making it well suited for next-generation HPC systems and graphics cards.
You can find out more details about the new 4GB HBM2 DRAM from Samsung over at the company’s website at the link below.