Samsung has announced a breakthrough in 5G technology with new RFICs and DAFE ASICs chipsets which will help reduce the size, weight and power consumption of its 5G bases station.
The company announced their first 5G smartphone at their press event yesterday, the Samsung Galaxy S10 5G.
“Our breakthroughs in 5G R&D have been the key driving forces behind the successful 5G commercial services across the U.S. and Korea in 2018, with over 36,000 5G base station shipments,” said Paul Kyungwhoon Cheun, Executive Vice President and Head of Networks Business at Samsung Electronics. “At the forefront of ushering in the wave of 4th Industrial Revolution, Samsung will continue to accelerate 5G commercialization ultimately impacting the overall industries and everyday lives by offering ultra-low latency, ultra-high speed, and massive connectivity.”
To achieve ultra-fast data speeds, 5G base stations use almost one thousand antenna element and several RFICs to utilize the mmWave spectrum. The adoption of RFICs plays a crucial role in supporting the reduction in the size and power consumption of base stations. Samsung’s new RFICs using cutting-edge 28nm CMOS semiconductor technology operate on bandwidths that have been expanded to a maximum 1.4GHz, compared to 800MHz for previous RFICs. The size of RFIC is reduced by 36 percent and the overall performance is enhanced by decreasing the noise level and improving the linearity characteristics of the RF power amplifier.
You can find out more details about Samsung’s 5G technology over at the company’s website at the link below.
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