Samsung has this week unveiled its new sixth-generation V-NAND SSD explicitly designed for client computing. The latest V-NAND breaks through current cell stacking limitation in 3D NAND with the industry’s first 100+ layer single-tier design for superior speed and power efficiency explains Samsung.
“Utilizing Samsung’s unique ‘channel hole etching’ technology, the new V-NAND adds around 40-percent more cells to the previous 9x-layer single-stack structure. This is achieved by building an electrically conductive mold stack comprised of 136 layers, then vertically piercing cylindrical holes from top to bottom, creating uniform 3D charge trap flash (CTF) cells.”
Samsung has started production of 250 GB SATA solid-state drives and plans to offerhigh-speed, high-capacity SSDs and eUFS solutions based on its sixth-generation V-NAND
“By bringing cutting-edge 3D memory technology to volume production, we are able to introduce timely memory lineups that significantly raise the bar for speed and power efficiency,” said Kye Hyun Kyung, executive vice president of Solution Product & Development at Samsung Electronics. “With faster development cycles for next-generation V-NAND products, we plan to rapidly expand the markets for our high-speed, high-capacity 512Gb V-NAND-based solutions.”
Jump over to the official Samsung new site for the complete press briefing, by following the link below.
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