Samsung has just announced that it has started producing 512Mb PRAM (phase change random access memory). PRAM is targeted at mobile devices such as smartphones. By using PRAM, the battery life of a handset can be extended over 20%.
Advantages of PRAM Over Traditional Memory
The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash. Samsung is optimistic that PRAM will replace NOR and NAND flash in mobile phones and similar battery-powered devices when those technologies run out of steam.
PRAM technology development is a slow race between Numonyx and Samsung: it’s like watching tortoises trying to sprint. Samsung announced its prototype 512Mbit PRAM die three years ago. Numonyx announced an early access programme last month, having introduced its first 128Mbit PRAM chip a year previously, using 90nm technology. This came from preceding Intel PRAM activities, with Intel having said back in March 2007 that it would/could deliver its first 128Mbit PRAM chips in the first quarter of 2008.
Potential Impact on Mobile Devices
The introduction of PRAM is a significant milestone in the evolution of memory technology for mobile devices. One of the most compelling advantages of PRAM is its ability to extend battery life by over 20%. This is particularly crucial for smartphones, which are often criticized for their limited battery life. By integrating PRAM, manufacturers can offer devices that last longer on a single charge, enhancing user experience and reducing the frequency of charging cycles.
Moreover, the speed at which PRAM can erase and rewrite data is a game-changer. With the ability to erase 64KWs in just 80ms and rewrite data seven times faster than NOR Flash, PRAM can significantly improve the performance of mobile devices. This means faster app launches, quicker data access, and overall smoother operation, which are critical factors for modern smartphones that handle a multitude of tasks simultaneously.
Comparison with Existing Technologies
While NAND and NOR flash memories have been the standard for years, they come with limitations that PRAM aims to overcome. NOR flash, for instance, is known for its fast read speeds but suffers from slow write and erase speeds. NAND flash, on the other hand, offers faster write and erase speeds but has slower read speeds compared to NOR flash. PRAM combines the best of both worlds, offering fast read, write, and erase speeds, making it a versatile and efficient alternative.
The development of PRAM has been a long journey, with both Samsung and Numonyx (now part of Micron Technology) making significant strides. Samsung’s announcement of its 512Mb PRAM production is a testament to the company’s commitment to innovation. Meanwhile, Numonyx’s early access program and the introduction of its 128Mbit PRAM chip using 90nm technology highlight the competitive nature of this field.
Future Prospects and Applications
Looking ahead, the potential applications of PRAM extend beyond mobile devices. As the technology matures and production scales up, we could see PRAM being used in a variety of other battery-powered devices, such as tablets, laptops, and even IoT (Internet of Things) devices. The improved performance and energy efficiency offered by PRAM could revolutionize these devices, making them more reliable and user-friendly.
In conclusion, Samsung’s production of 512Mb PRAM marks a significant advancement in memory technology. With its superior speed and energy efficiency, PRAM has the potential to replace traditional NOR and NAND flash memories in mobile devices and beyond. As the technology continues to evolve, we can expect to see even more innovative applications and improvements in the performance and battery life of our everyday devices.
Via Into Mobile
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