SK Hynix has introduced its new HBM2E DRAM products this week, offering the industry’s highest bandwidth. Providing 50% higher bandwidth and 100% additional capacity compared to the previous HBM2, SK Hynix’s HBM2E supports over 460 GB (Gigabyte) per second bandwidth based on the 3.6 Gbps (gigabits-per-second) speed performance per pin with 1,024 data I/Os (Inputs/Outputs). A maximum of eight 16-gigabit chips are vertically stacked, forming a single, dense package of 16 GB data capacity.
Technological Leadership and Market Impact
“SK Hynix has established its technological leadership since its world’s first HBM release in 2013,” said Jun-Hyun Chun, Head of HBM Business Strategy. “SK Hynix will begin mass production in 2020, when the HBM2E market is expected to open up, and continue to strengthen its leadership in the premium DRAM market.”
The introduction of HBM2E marks a significant milestone in the evolution of memory technology. The increased bandwidth and capacity are crucial for applications that demand high-speed data processing and large data sets. This includes fields such as scientific computing, financial modeling, and real-time data analytics. The ability to handle such large volumes of data at high speeds can lead to breakthroughs in these areas, enabling more complex simulations, faster decision-making processes, and more accurate predictions.
Applications in the Fourth Industrial Era
“SK Hynix’s HBM2E is an optimal memory solution for the fourth Industrial Era, supporting high-end GPU, supercomputers, machine learning, and artificial intelligence systems that require the maximum level of memory performance. Unlike commodity DRAM products which take on module package forms and are mounted on system boards, HBM chip is interconnected closely to processors such as GPUs and logic chips, distanced only a few µm units apart, which allows even faster data transfer.”
The fourth Industrial Era, characterized by the fusion of physical, digital, and biological worlds, demands unprecedented levels of computing power. High Bandwidth Memory (HBM) plays a critical role in meeting these demands. For instance, in machine learning and AI, the ability to process vast amounts of data quickly is essential for training complex models. HBM2E’s high bandwidth and capacity make it ideal for these applications, enabling faster training times and more efficient inference.
In supercomputing, HBM2E can significantly enhance performance by reducing the bottleneck caused by slower memory speeds. This can lead to more efficient simulations and computations, which are vital for research in fields such as climate science, physics, and bioinformatics. The close interconnection between HBM and processors also reduces latency, further boosting performance.
Moreover, the gaming industry stands to benefit from HBM2E’s advancements. High-end GPUs equipped with HBM2E can deliver smoother and more immersive gaming experiences, with faster load times and higher frame rates. This can also extend to virtual reality (VR) and augmented reality (AR) applications, where high-speed data transfer is crucial for rendering complex environments in real-time.
In conclusion, SK Hynix’s HBM2E DRAM products represent a significant leap forward in memory technology. With its unparalleled bandwidth and capacity, HBM2E is poised to drive innovation across various industries, from scientific research to gaming. As we move further into the fourth Industrial Era, the demand for high-performance memory solutions will only continue to grow, and SK Hynix is well-positioned to meet this demand with its cutting-edge HBM2E technology.
Source: TPU
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