This week Intel and Micron have unveiled the worlds first 128Gbit (16GB) multilevel-cell NAND flash memory chip. Which has been manufactured using a 20nm process, incorporating high-K metal gate transistors.
The 20nm process manufacturing process has been key to the development of the new NAND chips say Intel and Micron. Who also this week announced that their 20nm 64Gb NAND device is now moving to production later this month.
The latest Intel,Micron 20nm 64Gbit (8GB) chip measures just 118mm2 and enables a 30% to 40% reduction in board space compared to their existing 25nm 64Gbit (8GB) NAND device. The new 128GB NAND device is expected to arrive sometime in 2012.
Glen Hawk, vice president of Micron’s NAND Solutions Group comments:
“As portable devices get smaller and sleeker, and server demands increase, our customers look to Micron for innovative new storage technologies and system solutions that meet these challenges,” – “Our collaboration with Intel continues to deliver leading NAND technologies and expertise that are critical to building those systems.”
Source: Hot Hardware
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