Samsung has announced its new 3rd-generation 10nm-Class DRAM which are designed for ultra high performance and also power efficiency.
Samsung will start mass production of its new 1z-nm 8Gb DDR4 RAM in the second half of 2019 and it is expected to reach servers and high end PCs in 2020.
“Our commitment to break through the biggest challenges in technology has always driven us toward greater innovation. We are pleased to have laid the groundwork again for stable production of next-generation DRAM that ensures the highest performance and energy efficiency,” said Jung-bae Lee, executive vice president of DRAM product & technology, Samsung Electronics. “As we build out our 1z-nm DRAM lineup, Samsung is aiming to support its global customers in their deployment of cutting-edge systems and enabling proliferation of the premium memory market.”
Samsung’s development of the 1z-nm DRAM paves the way for an accelerated global IT transition to next-generation DRAM interfaces such as DDR5, LPDDR5 and GDDR6 that will power a wave of future digital innovation. Subsequent 1z-nm products with higher capacities and performance will allow Samsung to strengthen its business competitiveness and solidify its leadership in the premium DRAM market for applications that include servers, graphics and mobile devices.
You can find out more details about the new 3rd-generation 10nm-Class DRAM from Samsung over at the company’s website at the link below.